1/3 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.d rohm : vmt3 2sc5658 * denotes h fe 2sc2412k 2sc4617 rohm : emt3 eiaj : sc-75a jedec : sot-416 abbreviated symbol: b* rohm : umt3 eiaj : sc-70 jedec : sot-323 2sc4081 abbreviated symbol: b* abbreviated symbol: b* (1) base (2) emitter (3) collector rohm : smt3 eiaj : sc-59 jedec : sot-346 abbreviated symbol: b* (1) emitter (2) base (3) collector each lead has same dimensions 0.8 0.15 0~0.1 0.3min. 1.1 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 1.9 2.9 0.95 0.95 (1) emitter (2) base (3) collector each lead has same dimensions 1.25 2.1 0.3 0.15 0~0.1 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 (1) emitter (2) base (3) collector 0.7 0.15 0.1min. 0.55 0~0.1 0.2 1.6 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) 0~0.1 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.80.2 0.15max. 0.2 ( 2 ) ( 1 ) general purpose transistor (50v, 0.15a) 2sc2412k / 2sc4081 / 2sc4617 / 2sc5658 ? features ? dimensions (unit : mm) 1. low cob. cob=2.0pf (typ.)cob=2.0pf (typ.) 2. complements the 2sa1037ak / 2sa1576a / 2sa1774h / 2sa2029. ? structure epitaxial planar type npn silicon transistor ? absolute maximum (ta=25 ?c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature parameter v cbo v ceo v ebo p c tj tstg 60 v v v a w c c 50 7 0.15 i c 0.2 0.15 2sc2412k, 2sc4081 2sc4617, 2sc5658 150 ?55 to +150 symbol limits unit ? electrical characteristics (ta=25 ?c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 60 50 7 ? ? 120 ? ? ? ? ? ? ? ? ? ? 180 2 ? ? ? 0.1 0.1 390 0.4 ? 3.5 vi c =50a i c =1ma i e =50a v cb =60v v eb =7v v ce =6v, i c =1ma i c /i b =50ma/5ma v ce =12v, i e =?2ma, f=100mhz v ce =12v, i e =0a, f=1mhz v v a a ? v mhz pf typ. max. unit conditions transition frequency
2/3 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.d data sheet 2sc2412k / 2sc4081 / 2sc4617 / 2sc5658 ? packaging specifications and h fe package code taping basic ordering unit (pieces) t146 t106 3000 3000 ? ? qr h fe qr 2sc2412k 2sc4081 ?? tl 3000 ? ? t2l 8000 ? ? ? qr 2sc4617 ??? qr 2sc5658 type h fe values are classified as follows : item q r h fe 120 to 270 180 to 390 ? electrical characterristic curves fig.1 grounded emitter propagation characteristics 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta = 100c v ce =6v collector current : i c (ma) base to emitter voltage : v be (v) 25c ?55c fig.2 grounded emitter output characteristics ( ) 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25c i b =0a 0.40ma 0.50ma 0.45ma 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25c collector current : i c (ma) collector to emitter voltage : v ce (v) 3a 6a 9a 12a 15a 18a 21a 24a 27a 30a fig.3 grounded emitter output characteristics ( ) 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25c fig.4 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (ma) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25c ?55c ta=100c v ce = 5v fig.5 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (ma) fig. 6 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25c
3/3 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.d data sheet 2sc2412k / 2sc4081 / 2sc4617 / 2sc5658 fig.7 collector-emitter saturation voltage vs. collector current ( ) 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100c 25c ?55c fig.8 collector-emitter saturation voltage vs. collector current () collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100c 25c ?55c fig.9 gain bandwidth product vs. emitter current 50 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 100 200 500 ta=25c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.10 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cob ta=25c f = 1mhz i e =0a i c =0a cib fig.11 base-collector time constant vs. emitter current ?0.2 ?0.5 ?1 ?2 ?5 ?10 base collector time constant : ccr bb' (ps) emitter current : i e (ma) 10 20 50 100 200 ta=25c f=32mh z v cb =6v
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